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GS1A Scheda tecnica(PDF) 1 Page - Yea Shin Technology Co., Ltd |
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GS1A Scheda tecnica(HTML) 1 Page - Yea Shin Technology Co., Ltd |
1 / 2 page SURFACE MOUNT RECTIFIER VOLTAGE- 50 to 1000 Volts CURRENT - 1.0 Amperes FE ATURES • For surface mou nted applications • Lo w profile package • Built-in strain reli ef • Easy pick and place • Plastic package has Und erw riters Laboratory Flammability Classification 9 4 V-O • Lo w Forw ard Drop • • High tempera ture soldering : 260 OC / 10 seconds at terminals • Pb free product at available:99% Sn above meet RoHS environment substance directive request MECHAN ICAL D ATA • Case :JEDEC D O -214AC molded plastic • Terminals:Solder plated, solderable per MIL-STD-750 , Method 2026 • Polarity: Indicated by cathode band • Standard packaging: 12mm tape (EIA-481) MAXIM UM RATING S AND ELECTRICAL CH ARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Maximum Recurrent Peak Reverse Voltage V R R M 50 100 200 400 600 800 1000 V Maximum RMS Voltage V R M S 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage V D C 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current, at TL=75°C I(AV) 1.0 A Peak For ward Surge Current 8.3ms single ha lf sine- wave super imposed on rated load (J EDEC method) IFSM 30.0 A Maximum I nstanta neous Forward Vol tage at 1.0A V F 1.1 V Maximum DC Reverse Current TA=25°C at Rated DC Blocking Voltage TA=125°C IR 5.0 100 A A Maximum Reverse Recovery Time(Note 1) TJ=25°C T R R 2.5 s Typical Junction Capacitance (Note 2) C J 2.5 P F Maximum Therma l Resistance(Note 3) RθJA 15.0 /W Operating and Storage Temperature Range TJ ,TSTG -55 tO +1 50 NOTES: Reverse Recovery Test Condition s: IF=0.5A, IR=1.0A, I rr=0.25A 2. Measured at 1 MHz and applied Vr = 4.0 volts. 3. 8.0 mm2 ( .013mm thick ) land areas. SMA/DO-214AC Unit:inch(mm) .062(1.60) .047(1.20) .012(.305) .006(.152) .008(.203 ) .002(.051) .060(1.52) .030(0.76) .181(4.60) .157(4.00) .208(5.28) .188(4.80) .114(2.90) .098(2.50) .096(2.44) .078(2.00) SEMICONDUCTOR DATA SHEET http://www.yeashin.com 1 REV.03 20150105 GS1A THRU GS1M 1. Glass passivated dip Junction ° C ° C µ µ µ S Y M B OLS G S1 A G S1B G S1D G S1G G S 1J G S 1K GS1 M UNITS |
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