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BC847S Scheda tecnica(PDF) 3 Page - SeCoS Halbleitertechnologie GmbH |
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BC847S Scheda tecnica(HTML) 3 Page - SeCoS Halbleitertechnologie GmbH |
3 / 3 page Any changing of specification will not be informed individual BC847S NPN Silicon Multi-chip Transistor http://www.SeCoSGmbH.com Elektronische Bauelemente Contours of Constant Gain Bandwidth Product (f ) 0.1 1 10 100 1 2 3 5 7 10 I - COLLECTOR CURRENT (mA) C 175 MHz T 150 MHz 125 MHz 75 MHz 100 MHz Normalized Collect or-Cutoff Curre nt vs Ambient Temperature 25 50 75 100 125 150 1 10 100 1000 T - AMBIE NT TEMP ERATURE ( C) A ° Power Dissipation vs Ambient Temperature 0 25 50 75 100 125 150 0 100 200 300 400 500 TEMPERATURE ( C) º SC70-6 Wideband Noise Frequency vs Source Resistance 1,000 2,000 5,000 10,000 20,000 50,000 100,000 0 1 2 3 4 5 R - SOURCE RESISTANCE ( ) V = 5.0 V BANDWIDTH = 15.7 kHz CE I = 10 µA C I = 100 µA C S Ω I = 30 µA C Noise Figure vs Frequency 0.0001 0.001 0.01 0.1 1 10 100 0 2 4 6 8 10 f - FREQUENCY (MHz) V = 5.0V CE I = 200 µA, R = 10 k Ω C S I = 1.0 mA, R = 500 Ω C S I = 100 µA, R = 10 k Ω C S I = 1.0 mA, R = 5.0 k Ω C S 01-Jan-2006 Rev. B Page 3 of 3 |
Codice articolo simile - BC847S_15 |
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Descrizione simile - BC847S_15 |
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