BC556_15 datasheet(1/3 Pages) SECOS

Il numero della parte	BC556

Spiegazioni elettronici	Elektronische Bauelemente

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Produttore elettronici	SECOS [SeCoS Halbleitertechnologie GmbH]

Homepage	http://www.secosgmbh.com

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Any changing of specification will not be informed individual

BC556, B, C

1 2

TO-92

1. COLLECTOR

2. BASE

.

EMITTER

1

2

3

Elektronische Bauelemente

BC557, A, B, C

BC558, A, B, C

FEATURES

Power dissipation

PCM:

0.625

W (Tamb=25

℃)

Collector current

ICM:

- 0.1

A

Collector-base voltage

VCBO:

BC5

56

-80

V

BC5

57

-50

V

BC5

58

-30

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL

CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

BC5

56

BC5

57

BC5

58

VCBO

Ic=

-100µA , IE=0

-80

-50

-30

V

Collector-emitter breakdown voltage

BC5

56

BC5

57

BC5

58

VCEO = - 2mA, IB=0

-65

-45

-30

V

Emitter-base breakdown voltage

VEBO

IE= -100µA, IC=0

-6

V

Collector cut-off current

BC5

56

BC5

57

BC5

58

ICBO

VCB= -70V, IE=0

VCB= -45 V, IE=0

VCB= -25V, IE=0

-0.1

µA

Collector cut-off current

BC5

56

BC5

57

BC5

58

ICEO

VCE= -60 V, IB=0

VCE= -40 V, IB=0

VCE= -25 V, IB=0

-0.1

µA

Emitter cut-off current

BC5

56

BC5

57

BC5

58

IEBO

VEB= -5V, IC=0

-0.1

µA

DC current gain

BC5

56

BC5

57

BC5

58

BC5

57A/558A

BC5

56B/BC557B/BC558B

BC5

56C/BC557C/BC558C

hFE(1)

VCE=-5V, IC= -2mA

1

20

1

20

1

20

1

20

180

420

500

800

220

4

60

800

Collector-emitter saturation voltage

VCE(sat)

I C=-100 mA, IB= -5mA

-0.3

V

Base-emitter saturation voltage

VBE(sat)

I C= -100 mA, IB=-5mA

-1

V

Transition frequency

f T

VCE= -5V, IC= -10mA

f = 100MHz

150

MHz

PNP Transistor

01-Jun-2002 Rev. A

Page 1 of 3

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

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