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SI4558DY Scheda tecnica(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI4558DY Scheda tecnica(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
2 / 6 page SMD Type www.kexin.com.cn 2 MOSFET Complementary Power Trench MOSFET SI4558DY (KI4558DY) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Type Min Typ Max Unit ID=250μA, VGS=0V N-CH 30 ID=-250μA, VGS=0V P-CH -30 VDS=30V, VGS=0V N-CH 1 VDS=-30V, VGS=0V P-CH -1 VDS=24V, VGS=0V,TJ=70℃ N-CH 5 VDS=-24V, VGS=0V,TJ=70℃ P-CH -5 Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ± 100 nA VDS=VGS , ID=250μA N-CH 1 VDS=VGS, ID=-250μA P-CH -1 VGS=10V, ID=6A 32 40 VGS=4.5V, ID=4.8A 45 60 VGS=-10V, ID=-6A 32 40 VGS=-4.5V, ID=-4.4A 56 70 VDS=5V, VGS=10V N-CH 30 VDS=-5V, VGS=-10V P-CH -30 VDS=5V, VGS=4.5V N-CH 8 VDS=-5V, VGS=-4.5V P-CH -8 VDS=15V, ID=6A N-CH 13 VDS=-15V, ID=-6A P-CH 10.6 N-CH 16 30 N-Channel: P-CH 22 35 VGS=10V, VDS=15V, ID=6A N-CH 3.4 P-Channel: P-CH 5.4 VGS=-10V, VDS=-15V, ID=-6A N-CH 2.3 P-CH 3.6 N-CH 12 25 N-Channel: P-CH 12 25 VGS=10V, VDS=15V, ID=1A, RG=6Ω N-CH 12 25 RL=15Ω P-CH 12 25 P-Channel: N-CH 27 55 VGS=-10V, VDS=-15V, ID=-1A, RG=6Ω P-CH 38 55 RL=15Ω N-CH 24 50 P-CH 25 50 IF=2A, dI/dt=100A/μs N-CH 45 80 IF=-2A, dI/dt=100A/μs P-CH 50 80 N-CH 2 P-CH -2 IS=2A,VGS=0V N-CH 0.77 1.2 IS=-2A,VGS=0V P-CH -0.77 -1.2 V IDSS μ A On-State drain Current (Note.1) ID(On) A Diode Forward Voltage (Note.1) VSD IS A Body Diode Reverse Recovery Time trr ns Turn-On Rise Time Turn-Off DelayTime Maximum Body-Diode Continuous Current S nC Qg Qgs Qgd gFS Drain-Source Breakdown Voltage VDSS V Zero Gate Voltage Drain Current tf td(on) tr td(off) Gate Threshold Voltage VGS(th) V N-CH RDS(On) Static Drain-Source On-Resistance (Note.1) mΩ P-CH Turn-On DelayTime Turn-Off Fall Time Forward Transconductance (Note.1) Total Gate Charge Gate Source Charge Gate Drain Charge Note.1: Pulse test; pulse width ≤ 300 us, duty cycle ≤ 2%. |
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