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SI2333CDS Scheda tecnica(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2333CDS Scheda tecnica(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd |
4 / 5 page SMD Type www.kexin.com.cn 4 MOSFET . P-Channel Enhancement MOSFET SI2333CDS (KI2333CDS) ■ Typical Characterisitics Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 1 0.01 0.001 0.1 10 100 T J = 150 °C T J = - 55 °C T J = 25 °C - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) ID = 1 mA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) T J = 25 °C T J = 125 °C ID = 5.1 A 0 2 4 6 8 10 0.01 0.1 1 10 100 1000 Time (s) TA = 25 °C Safe Operating Area VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 100 s, DC Limitedby R DS(on) * B V DSS Limited 10 ms 1 ms 100 µs 100 ms 1 s, 10 s |
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