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SI2315BDS-HF-3 Scheda tecnica(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2315BDS-HF-3 Scheda tecnica(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd |
4 / 5 page SMD Type www.kexin.com.cn 4 MOSFET . ■ Typical Characterisitics Source-Drain Diode Forward Voltage Threshold Voltage 1.0 1.2 1 10 20 0.0 0.2 0.4 0.6 0.8 T J = 150 °C V SD - Source-to-Drain Voltage (V) T J = 25 °C - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 ID = 250µA T J - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.0 0.1 0.2 0.3 0.4 0 1 2 3 4 5 ID = 3.5 A V GS -Gate-to-Source Voltage (V) 0.01 0 1 6 12 2 4 10 600 0.1 Time (s) 8 10 100 TA = 25 °C Safe Operating Area 100 1 0.1 1 10 100 Limited by RDS(on)* 0.01 10 TA = 25 °C Single Pulse 10 ms 100 ms DC, 100 s 0.1 1 ms, 100 µs 1 s 10 s V DS - Drain-to-Source Voltage (V) * VGS minimum V GS at which RDS(on) is specified P-Channel MOSFET SI2315BDS-HF (KI2315BDS-HF) |
Codice articolo simile - SI2315BDS-HF-3 |
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Descrizione simile - SI2315BDS-HF-3 |
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