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SI2307BDS-3 Scheda tecnica(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2307BDS-3 Scheda tecnica(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 5 page SMD Type www.kexin.com.cn 1 MOSFET P-Channel Enhancement MOSFET SI2307BDS (KI2307BDS) ■ Features ● VDS (V) =-30V ● RDS(ON) < 78mΩ (VGS =-10V) ● RDS(ON) < 130mΩ (VGS =-4.5V) G S D 2 3 1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS Gate-Source Voltage VGS -3.2 -2.5 -2.6 -2.0 Pulsed Drain Current *2 IDM Power Dissipation *1 Ta = 25℃ 1.25 0.75 Ta = 70℃ 0.8 0.48 Thermal Resistance.Junction- to-Ambient *1 100 Thermal Resistance.Junction- to-Ambient *3 166 Junction Temperature TJ Storage Temperature Range Tstg 150 -55 to 150 -12 PD W RthJA -30 ± 20 Continuous Drain Current (Tj=150℃) *1 ID V ℃ /W A ℃ *1 Pulse width limited by maximum junction temperature. *2 Surface Mounted on FR4 board, t ≤ 5 s. *3 Surface Mounted on FR4 board. 1. Gate 2. Source 3. Drain 0.4 +0.1 -0.1 2.9 +0.2 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.2 1 2 3 Unit: mm SOT-23-3 0.15 +0.02 -0.02 Ta = 25℃ Ta = 70℃ |
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