IRFF110 datasheet(2/7 Pages) INTERSIL

Il numero della parte	IRFF110

Spiegazioni elettronici	3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET

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Produttore elettronici	INTERSIL [Intersil Corporation]

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Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

IRFF110

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

100

V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

100

V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

3.5

A

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

14

A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±20

V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

15

W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.12

W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

19

mJ

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG

-55 to 150

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 125oC

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250µA (Figure 10)

100

-

V

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA

2.0

-

4.0

V

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

-

25

µA

VDS = 100V, VGS = 0V, TJ = 125

oC

-

250

µA

On-State Drain Current (Note 2)

ID(ON)

VDS > ID(ON) x rDS(ON)MAX, VGS = 10V

3.5

-

A

Gate to Source Leakage Current

IGSS

VGS = ±20V

-

±100

nA

Drain to Source On Resistance (Note 2)

rDS(ON)

VGS = 10V, ID = 1.5A (Figures 8, 9)

-

0.5

0.600

Ω

Forward Transconductance (Note 2)

gfs

VDS > ID(ON) x rDS(ON)MAX, ID = 1.5A (Figure 12)

1.0

1.5

-

S

Turn-On Delay Time

td(ON)

VDD ≅ 0.5 x Rated BVDSS, ID ≈ 3.5A, RG = 9.1Ω

VGS = 10V, RL = 13Ω (Figures 17, 18),

RL = 14Ω for VDS = 50V, RL = 23Ω for VDS = 80V,

MOSFET Switching Times are Essentially

Independent of Operating Temperature

-10

20

ns

Rise Time

tr

-15

25

ns

Turn-Off Delay Time

td(OFF)

-15

25

ns

Fall Time

tf

-10

20

ns

Total Gate Charge

(Gate to Source + Gate to Drain)

Qg(TOT)

VGS = 10V, ID = 3.5A, VDS = 0.8 x Rated BVDSS,

IG(REF) = 1.5mA (Figures 14, 19, 20), Gate Charge is

Essentially Independent of Operating Temperature

-

5.0

7.5

nC

Gate to Source Charge

Qgs

-

2.0

-

nC

Gate to Drain “Miller” Charge

Qgd

-

3.0

-

nC

Input Capacitance

CISS

VDS = 25V, VGS = 0V, f = 1MHz (Figure 11)

-

135

-

pF

Output Capacitance

COSS

-80-

pF

Reverse Transfer Capacitance

CRSS

-20-

pF

Internal Drain Inductance

LD

Measured from the Drain

Lead, 5.0mm (0.2in) from

Header to Center of Die

Modified MOSFET

Symbol Showing the

Internal Device

Inductances

-

5.0

-

nH

Internal Source Inductance

LS

Measured from the Source

Lead, 5.0mm (0.2in) from

Header to Source Bonding

Pad

-15-

nH

Thermal Resistance, Junction to Case

RθJC

-

8.33

oC/W

Thermal Resistance, Junction to Ambient

RθJA

Free Air Operation

-

175

oC/W

LS

LD

G

D

S

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