4-253

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Continuous Source to Drain Current

Modified MOSFET

Symbol Showing the

Integral Reverse

P-N Junction Diode

-

-

4.5

A

Pulse Source to Drain Current (Note 3)

-

-

18

A

Source to Drain Diode Voltage (Note 2)

-

-

1.6

V

Reverse Recovery Time

180

350

760

ns

Reverse Recovered Charge

0.96

2.2

4.3

µC

NOTES:

2. Pulse test: pulse width

≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

G

D

S

0

50

100

150

0

0.2

0.4

0.6

0.8

1.0

1.2

50

75

100

25

150

5

4

3

0

2

1

125

1

0.1

1

10

0.01

0.1

SINGLE PULSE

NOTES:

0.02

0.01

0.1

0.2

0.5

0.05

IRF830