FDN352AP datasheet(1/4 Pages) KEXIN

Il numero della parte	FDN352AP

Spiegazioni elettronici	P-Channel MOSFET

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Produttore elettronici	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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MOSFET

P-Channel MOSFET

FDN352AP (KDN352AP)

■

Features

●

VDS (V) =-30V

●

ID =-1.3 A (VGS =-10V)

●

RDS(ON) ＜ 180mΩ (VGS =-10V)

●

RDS(ON) ＜ 300mΩ (VGS =-4.5V)

1. Gate

2. Source

3. Drain

D

G

S

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

-30

Gate-Source Voltage

VGS

±

25

Continuous Drain Current

ID

-1.3

Pulsed Drain Current

IDM

-10

Power Dissipation

(Note.1)

0.5

(Note.2)

0.46

Thermal Resistance.Junction- to-Ambient

RthJA

250

Thermal Resistance.Junction- to-Case

RthJC

75

Junction Temperature

TJ

150

Junction Storage Temperature Range

Tstg

-55 to 150

℃

PD

W

V

℃

/W

A

Note.1: RθJA= 250°C/W when mounted on a 0.02 in pad of 2oz. copper.

Note.2: RθJA= 270°C/W when mounted on a 0.001 in pad of 2oz. copper.

2

0.4 +0.1

-0.1

2.9 +0.1

-0.1

0.95 +0.1

-0.1

1.9 +0.1

-0.1

1

2

3

Unit: mm

SOT-23

0.1 +0.05

-0.01

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