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IRF244 Scheda tecnica(PDF) 2 Page - Intersil Corporation |
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IRF244 Scheda tecnica(HTML) 2 Page - Intersil Corporation |
2 / 7 page 5-2 Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified IRF244 IRF245 IRF246 IRF247 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . VDS 250 250 275 275 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . VDGR 250 250 275 275 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 14 13 14 13 A TC = 100 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I D 8.8 8.0 8.8 8.0 A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . IDM 56 52 56 52 A Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 ±20 ±20 ±20 V Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . PD 125 125 125 125 W Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 1.0 1.0 1.0 W/oC Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS 550 550 550 550 mJ Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . TL Package Body for 10s, see TB334 . . . . . . . . . . . . . . . . . .Tpkg 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 125oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA (Figure 10) IRF244, IRF245 250 - - V IRF246, IRF247 275 - - V Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V Zero-Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125 oC - - 250 µA On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V IRF244, IRF246 14 - - A IRF245, IRF247 13 - - A Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA Drain to Source On-State Resistance (Note 2) rDS(ON) VGS = 10V, ID = 8A, (Figures 8, 9) IRF244, IRF246 - 0.20 0.28 Ω IRF245, IRF247 - 0.24 0.34 Ω Forward Transconductance (Note 2) gfs VDS ≥ 50V, ID = 8A, (Figure 12) 6.7 10 - S Turn-On Delay Time td(ON) VDD = 125V, ID ≈ 14A, RG = 9.1Ω, RL = 8.9Ω (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature -16 24ns Rise Time tr - 67 100 ns Turn-Off Delay Time td(OFF) -53 80ns Fall Time tf -49 74ns Total Gate Charge (Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 14A, VDS = 0.8 x Rated BVDSS, Ig(REF) = 1.5mA, (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature -39 59 nC Gate to Source Charge Qgs - 6.6 - nC Gate to Drain “Miller” Charge Qgd -20- nC IRF244, IRF245, IRF246, IRF247 |
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