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IRF540NS Scheda tecnica(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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IRF540NS Scheda tecnica(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2 / 6 page  SMD Type www.kexin.com.cn 2 MOSFET N-Channel MOSFET IRF540NS (KRF540NS) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 100 V VDS=100V, VGS=0V 25 VDS=80V, VGS=0V, TJ=150℃ 250 Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ± 100 nA Gate Threshold Voltage VGS(th) VDS=VGS , ID=250μA 2 4 V Static Drain-Source On-Resistance RDS(On) VGS=10V, ID=16A (Note.1) 44 mΩ Forward Transconductance gFS VDS=50V, ID=16A (Note.1) 21 S Input Capacitance Ciss 1960 Output Capacitance Coss 250 Reverse Transfer Capacitance Crss 40 Total Gate Charge Qg 71 Gate Source Charge Qgs 14 Gate Drain Charge Qgd 21 Turn-On DelayTime td(on) 11 Turn-On Rise Time tr 35 Turn-Off DelayTime td(off) 39 Turn-Off Fall Time tf 35 Body Diode Reverse Recovery Time trr 115 170 Body Diode Reverse Recovery Charge Qrr 505 760 nC Single Pulse Avalanche Energy EAS IAS = 16A, L = 1.5mH 185 mJ Diode Forward Voltage VSD IS=16A,VGS=0V,TJ = 25°C 1.2 V A Maximum Body-Diode Continuous Current Pulsed Source Current ISM IS 33 110 nH 4.5 7.5 Internal Drain Inductance Internal Source Inductance LD LS ns Zero Gate Voltage Drain Current IDSS u A VGS=10V, VDS=50V, ID=16A,RG=5.1Ω IF= 16A, dI/dt= 100A/μs,TJ = 25°C VGS=0V, VDS=25V, f=1MHz VGS=10V, VDS=80V, ID=16A pF nC Between lead, 6mm (0.25in.) from package and center of die contact S D G S D G MOSFET symbol showing the integral reverse p-n junction diode. (Note.1) (Note.1) Note.1: Pulse width ≤ 400μs; duty cycle ≤ 2%. |
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