MTB060N15J3-0-T3-G datasheet(3/9 Pages) CYSTEKEC

Il numero della parte	MTB060N15J3-0-T3-G

Spiegazioni elettronici	N -Channel Enhancement Mode Power MOSFET

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Produttore elettronici	CYSTEKEC [Cystech Electonics Corp.]

Homepage	http://www.cystekec.com

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CYStech Electronics Corp.

Spec. No. : C970J3

Issued Date : 2014.06.14

Revised Date : 2014.06.16

Page No. : 3/9

MTB060N15J3

CYStek Product Specification

-

1

VDS =150V, VGS =0V

IDSS

-

25

μA

VDS =150V, VGS =0, Tj=55

°C

-

59

75

VGS =10V, ID=4A

RDS(ON) *1

-

60

80

mΩ

VGS =4.5V, ID=2A

Dynamic

Qg *1, 2

-

28

-

Qgs *1, 2

-

5.1

-

Qgd *1, 2

-

10.7

-

nC

ID=16A, VDS=120V, VGS=4.5V

td(ON) *1, 2

-

12

-

tr

*1, 2

-

15

-

td(OFF) *1, 2

-

70

-

tf *1, 2

-

100

-

ns

VDS=75V, ID=16A, VGS=10V, RG=6Ω

Ciss

-

1957

-

Coss

-

111

-

Crss

-

53

-

pF

VGS=0V, VDS=30V, f=1MHz

Rg

-

1.3

-

Ω

VGS=15mV,VDS=0, f=1MHz

Source-Drain Diode

IS *1

-

16

ISM *3

-

48

A

VSD *1

-

0.75

1.2

V

IS=4A, VGS=0V

trr

-

61

-

ns

Qrr

-

150

-

nC

IF=14A, dIF/dt=100A/μs

Note : *1.Pulse Test : Pulse Width

≤300μs, Duty Cycle≤2%

*2.Independent of operating temperature

*3.Pulse width limited by maximum junction temperature.

Recommended soldering footprint

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