MTBA6C15J4 datasheet(7/13 Pages) CYSTEKEC

Il numero della parte	MTBA6C15J4

Spiegazioni elettronici	N P-Channel Enhancement Mode Power MOSFET

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Produttore elettronici	CYSTEKEC [Cystech Electonics Corp.]

Homepage	http://www.cystekec.com

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7 / 13 page

CYStech Electronics Corp.

Spec. No. : C938J4

Issued Date : 2014.10.15

Revised Date : 2014.10.28

Page No. : 7/13

MTBA6C15J4

CYStek Product Specification

Q2, P-CH Typical Characteristics

Typical Output Characteristics

0

4

8

12

16

20

024

68

10

Brekdown Voltage vs Ambient Temperature

0.4

0.6

0.8

1

1.2

1.4

-75 -50 -25

0

25

50 75 100 125 150 175 200

Tj, Junction Temperature(°C)

ID=-250μA,

VGS=0V

-VDS, Drain-Source Voltage(V)

-10V

-9V

-8V

-7V

-6V

-5V

V =-4V

GS

VGS=-3.5V

VGS=-3V

VGS=-2.5V

Static Drain-Source On-State resistance vs Drain Current

100

1000

0.01

0.1

1

10

100

-ID, Drain Current(A)

VGS=-4.5V

VGS=-10V

VGS=-3V

VGS=-2.5V

Source Drain Current vs Source-Drain Voltage

0.2

0.4

0.6

0.8

1

1.2

024

68

-IS, Source Drain Current(A)

10

VGS=0V

Tj=25°C

Tj=150°C

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

200

240

280

320

360

400

440

480

520

560

600

02

4

68

10

Drain-Source On-State Resistance vs Junction Tempearture

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

-75 -50 -25

0

25 50

75 100 125 150 175 200

Tj, Junction Temperature(°C)

VGS=-10V, ID=-1.5A

RDS(ON)@Tj=25°C : 253mΩ typ.

VGS=-4.5V, ID=-1A

RDS(ON)@Tj=25°C : 274mΩ typ.

-VGS, Gate-Source Voltage(V)

ID=-1.5A

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