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MTB030N04N3 Scheda tecnica(PDF) 4 Page - Cystech Electonics Corp.

Il numero della parte MTB030N04N3
Spiegazioni elettronici  40V N-Channel Enhancement Mode MOSFET
Download  9 Pages
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Produttore elettronici  CYSTEKEC [Cystech Electonics Corp.]
Homepage  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB030N04N3 Scheda tecnica(HTML) 4 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C884N3
Issued Date : 2014.08.20
Revised Date :
Page No. : 4/ 9
MTB030N04N3
CYStek Product Specification
Typical Characteristics
Typical Output Characteristics
0
4
8
12
16
20
24
28
32
0
1
2
3
4
5
VDS, Drain-Source Voltage(V)
VGS=2.5V
3V
3.5V
4V
10V, 9V, 8V, 7V, 6V, 5V
Brekdown Voltage vs Ambient Temperature
0.4
0.6
0.8
1
1.2
1.4
-75
-50
-25
0
25
50
75
100 125 150 175
Tj, Junction Temperature(°C)
ID=250
μA,
VGS=0V
Static Drain-Source On-State resistance vs Drain Current
10
100
1000
0.01
0.1
1
10
100
ID, Drain Current(A)
4.5V
3V
10V
Reverse Drain Current vs Source-Drain Voltage
0.2
0.4
0.6
0.8
1
1.2
0
1
2
3
4
5
6
7
8
9
10
IDR, Reverse Drain Current(A)
Tj=25°C
Tj=150°C
VGS=0V
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
0
30
60
90
120
150
180
210
240
270
300
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
ID=7.9A
Drain-Source On-State Resistance vs Junction Tempearture
0.4
0.8
1.2
1.6
2
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
VGS=10V, ID=7.9A
RDSON@Tj=25°C : 25.3mΩ typ.


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