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MTB09P04DJ3-0-T3-G Scheda tecnica(PDF) 4 Page - Cystech Electonics Corp.

Il numero della parte MTB09P04DJ3-0-T3-G
Spiegazioni elettronici  P-Channel Enhancement Mode Power MOSFET
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Produttore elettronici  CYSTEKEC [Cystech Electonics Corp.]
Homepage  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB09P04DJ3-0-T3-G Scheda tecnica(HTML) 4 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C877J3
Issued Date : 2014.12.25
Revised Date : 2014.12.26
Page No. : 4/9
MTB09P04DJ3
CYStek Product Specification
Typical Characteristics
Typical Output Characteristics
0
40
80
120
160
200
01
2
34
5
Brekdown Voltage vs Ambient Temperature
0.4
0.6
0.8
1
1.2
1.4
-75 -50 -25
0
25
50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
ID=-250μA,
VGS=0V
10V,9V,8V,7V,6V,5V
-VDS, Drain-Source Voltage(V)
-VGS=4V
-VGS=3V
-VGS=2V
-VGS=2.5V
Static Drain-Source On-State resistance vs Drain Current
0
10
20
30
40
50
60
70
80
90
100
0.01
0.1
1
10
100
-ID, Drain Current(A)
In descending order
VGS=-2.5V
-3V
-4.5V
-10V
Reverse Drain Current vs Source-Drain Voltage
0.2
0.4
0.6
0.8
1
1.2
0
2
4
6
8
10
12
14
16
18
20
-IDR, Reverse Drain Current(A)
Tj=25°C
Tj=150°C
VGS=0V
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
0
10
20
30
40
50
60
70
80
90
100
02
4
6
8
10
Drain-Source On-State Resistance vs Junction Tempearture
0
0.5
1
1.5
2
2.5
3
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
VGS=-10V, ID=-25A
RDS(ON)@Tj=25°C : 5.2mΩ typ
-VGS, Gate-Source Voltage(V)
ID=-25A


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