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SI2304DS-HF-3 Scheda tecnica(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2304DS-HF-3 Scheda tecnica(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 4 page SMD Type www.kexin.com.cn 1 MOSFET ■ Features ● VDS (V) = 30V ● RDS(ON) < 117mΩ (VGS = 10V) ● RDS(ON) < 190mΩ (VGS = 4.5V) ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit VDS 30 VGS ±20 Ta=25℃ 2.5 Ta=70℃ 2.0 IDM 10 Ta=25℃ 1.25 Ta=70℃ 0.8 100 166 TJ 150 Tstg -55 to 150 ℃ /W ℃ Junction Temperature RthJA Parameter Continuous Drain Current *1 ID Drain-Source Voltage Gate-Source Voltage V Pulsed Drain Current *2 A Storage Temperature Range PD Power Dissipation Thermal Resistance.Junction- to-Ambient *1 Thermal Resistance.Junction- to-Ambient *3 W *2 Pulse width limited by maximum junction temperature. *1 Surface Mounted on FR4 Board, t ≤ 5 sec. *3 Surface Mounted on FR4 Board. G S D 2 3 1 ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish N-Channel MOSFET SI2304DS-HF (KI2304DS-HF) 0.4 +0.1 -0.1 2.9 +0.2 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.2 1 2 3 Unit: mm SOT-23-3 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain |
Codice articolo simile - SI2304DS-HF-3 |
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Descrizione simile - SI2304DS-HF-3 |
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