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SI2302DS Scheda tecnica(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2302DS Scheda tecnica(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 4 page SMD Type www.kexin.com.cn 1 MOSFET ■ Features ● VDS=20V ● RDS(on)= 85mΩ@VGS=4.5V ,ID=3.6A ● RDS(on)= 115mΩ@VGS=2.5V ,ID=3.1A 1.Gate 2.Source 3.Drain G S D 2 3 1 ■ Absolute Maximum Ratings Ta = 25℃ N-Channel Enhancement MOSFET SI2302DS (KI2302DS) Symbol Rating Unit VDS 20 VGS ±8 Ta=25℃ 2.8 Ta=70℃ 2.2 IDM 10 Ta=25℃ 1.25 W Ta=70℃ 0.8 Thermal Resistance.Junction- to-Ambient *1 100 *2 166 TJ 150 Tstg -55 to 150 ℃ /W RthJA Pulsed Drain Current ℃ Junction Temperature Parameter Continuous Drain Current *1 ID Drain-Source Voltage Gate-Source Voltage V A Storage Temperature Range PD Power Dissipation Notes: *2.Surface Mounted on FR4 Board. *1.Surface Mounted on FR4 Board, t ≤ 5 sec. 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 1 2 3 Unit: mm SOT-23 0.1 +0.05 -0.01 |
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