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2SD1621-T Scheda tecnica(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SD1621-T Scheda tecnica(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 3 page SMD Type www.kexin.com.cn 1 Transistors NPN Transistors 2SD1621 ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary transistor with the 2SB1121 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 2 Collector current -pulse ICP 5 Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ℃ A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA, IE= 0 30 Collector- emitter breakdown voltage VCEO Ic= 1 mA, RBE= ∞ 25 Emitter - base breakdown voltage VEBO IE= 100μA, IC= 0 6 Collector-base cut-off current ICBO VCB= 20V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 4V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=1.5A, IB=75mA 0.18 0.4 Base - emitter saturation voltage VBE(sat) IC=1.5A, IB=75mA 0.85 1.2 VCE= 2V, IC= 100mA 100 560 VCE= 2V, IC= 1.5A 65 Turn-on time ton 60 Storage time tstg 500 Turn-off time toff 25 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 19 pF Transition frequency fT VCE= 10V, IC= 50mA 150 MHz V uA V See specified Test Circuit. ns DC current gain hFE ■ Classification of hfe(1) Type 2SD1621-R 2SD1621-S 2SD1621-T 2SD1621-U Range 100-200 140-280 200-400 280-560 Marking DDR DDS DDT DDU |
Codice articolo simile - 2SD1621-T |
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