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2SD1804-T Scheda tecnica(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SD1804-T Scheda tecnica(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 3 page SMD Type www.kexin.com.cn 1 Transistors NPN Transistors 2SD1804 ■ Features ● Low Collector-to-Emitter Saturation Voltage ● Fast Switching Speed ● High Current And High fT. ● Complementary to 2SB1204 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4 .60 +0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 0.127 max TO-252 Unit: mm 1 Base 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 8 Collector Current - Pulse ICP 12 Collector Power Dissipation Tc = 25℃ 20 Ta = 25℃ 1 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ℃ PC W A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA, IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA, RBE= ∞ 50 Emitter - base breakdown voltage VEBO IE= 100μA, IC= 0 6 Collector-base cut-off current ICBO VCB= 50 V , IE= 0 1 Emitter cut-off current IEBO VEB= 5V , IC=0 1 Collector-emitter saturation voltage VCE(sat) IC=4 A, IB=200mA 0.2 0.4 Base - emitter saturation voltage VBE(sat) IC=4 A, IB=200mA 0.95 1.3 hFE(1) VCE= 2V, IC= 500mA 70 400 hFE(2) VCE= 2V, IC= 6 A 35 Storage Time tstg 500 Fall Time tf 20 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 65 pF Transition frequency fT VCE= 5V, IC= 1 A 180 MHz V uA See Test Circuit ns DC current gain V ■ Classification of hfe(1) Type 2SD1804-Q 2SD1804-R 2SD1804-S 2SD1804-T Range 70-140 100-200 140-280 200-400 |
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