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2SD1280-R Scheda tecnica(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Il numero della parte 2SD1280-R
Spiegazioni elettronici  NPN Transistors
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Produttore elettronici  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Homepage  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SD1280-R Scheda tecnica(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
www.kexin.com.cn
1
Transistors
NPN Transistors
2SD1280
Features
Satisfactory operation performances at high efficiency with the
low-voltage power supply.
Low collector to emitter saturation voltage VCE(sat)
Complementary to 2SB956
1.Base
2.Collector
3.Emitter
1.70 0.1
0.42 0.1
0.46 0.1
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
20
Collector - Emitter Voltage
VCEO
20
Emitter - Base Voltage
VEBO
5
Collector Current - Continuous
IC
1
Collector Current - Pulse
ICP
2
Collector Power Dissipation
PC
1
W
Junction Temperature
TJ
150
Storage Temperature Range
Tstg
-55 to 150
V
A
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector- base breakdown voltage
VCBO
Ic= 100 μA, IE= 0
20
Collector- emitter breakdown voltage
VCEO
Ic= 1 mA, IB= 0
20
Emitter - base breakdown voltage
VEBO
IE= 100μA, IC= 0
5
Collector-base cut-off current
ICBO
VCB= 20 V , IE= 0
1
Emitter cut-off current
IEBO
VEB= 5V , IC=0
1
Collector-emitter saturation voltage
VCE(sat) IC=1A, IB=50mA
0.5
Base - emitter saturation voltage
VBE(sat) IC=500 mA, IB=50mA
1.2
hFE(1)
VCE= 2V, IC= 500mA
90
150
360
hFE(2)
VCE= 2V, IC= 1.5 A
50
100
Collector output capacitance
Cob
VCB = 6V, IE = 0, f = 1MHz
18
pF
Transition frequency
fT
VCE= 6V, IE= -50mA,f=200MHz
150
MHz
DC current gain
V
V
uA
Classification of hfe(1)
Type
2SD1280-Q
2SD1280-R
2SD1280-S
2SD1280-T
Range
90-155
130-210
180-280
250-360
Marking
RQ
RR
RS
RT


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