IRF5NJ5305SCX datasheet(4/7 Pages) IRF

Il numero della parte	IRF5NJ5305SCX

Spiegazioni elettronici	HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5)

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Produttore elettronici	IRF [International Rectifier]

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

1

10

100

0

500

1000

1500

2000

2500

-V

, Drain-to-Source Voltage (V)

DS

V

C

=

0V,

C

f = 1MHz

+ C

C

SHORTED

GS

iss

gs

gd ,

ds

rss

gd

oss

ds

gd

Ciss

Coss

Crss

0

20

40

60

80

0

4

8

12

16

20

Q , Total Gate Charge (nC)

G

FOR TEST CIRCUIT

SEE FIGURE

I =

D

13

-16A

V

=-11V

DS

V

=-28V

DS

V

=-44V

DS

0.1

1

10

100

0.2

0.6

1.0

1.4

1.8

-V

,Source-to-Drain Voltage (V)

SD

V

= 0 V

GS

T = 25 C

J

°

T = 150 C

J

°

1

10

100

-VDS , Drain-toSource Voltage (V)

1

10

100

1000

Tc = 25°C

Tj = 150°C

Single Pulse

1ms

10ms

OPERATION IN THIS AREA

LIMITED BY R DS(on)

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