CD40107BMS datasheet(2/7 Pages) INTERSIL

Il numero della parte	CD40107BMS

Spiegazioni elettronici	CMOS Dual 2 Input NAND Buffer/Driver

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Produttore elettronici	INTERSIL [Intersil Corporation]

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Speciﬁcations CD40107BMS

Absolute Maximum Ratings

Reliability Information

DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V

(Voltage Referenced to VSS Terminals)

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V

DC Input Current, Any One Input

. . . . . . . . . . . . . . . . . . . . . . . .±10mA

Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC

Package Types D, F, K, H

Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC

At Distance 1/16

± 1/32 Inch (1.59mm ± 0.79mm) from case for

10s Maximum

Thermal Resistance . . . . . . . . . . . . . . . .

θ

ja

θ

jc

Ceramic DIP and FRIT Package . . . . .

80oC/W

20oC/W

Flatpack Package . . . . . . . . . . . . . . . .

70oC/W

20oC/W

Maximum Package Power Dissipation (PD) at +125oC

For TA = -55

oC to +100oC (Package Type D, F, K) . . . . . . 500mW

For TA = +100

oC to +125oC (Package Type D, F, K). . . . . .Derate

Linearity at 12mW/oC to 200mW

Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW

For TA = Full Package Temperature Range (All Package Types)

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER

SYMBOL

CONDITIONS (NOTE 1)

GROUP A

SUBGROUPS

TEMPERATURE

LIMITS

UNITS

MIN

MAX

Supply Current

IDD

VDD = 20V, VIN = VDD or GND

1

+25oC-

2

µA

2

+125oC

-

200

µA

VDD = 18V, VIN = VDD or GND

3

-55oC-

2

µA

Input Leakage Current

IIL

VIN = VDD or GND

VDD = 20

1

+25oC

-100

-

nA

2

+125oC

-1000

-

nA

VDD = 18V

3

-55oC

-100

-

nA

Input Leakage Current

IIH

VIN = VDD or GND

VDD = 20

1

+25oC

-

100

nA

2

+125oC

-

1000

nA

VDD = 18V

3

-55oC

-

100

nA

Output Drive Voltage

VOL5A

VDD = 5V, IOL = 16mA

1

+25oC

-

0.4

V

Output Drive Voltage

VOL5B

VDD = 5V, IOL = 34mA

1

+25oC

-

1.0

V

VOL10A

VDD = 10V, IOL = 37mA

1

+25oC

-

0.5

V

Output Drive Voltage

VOL10B

VDD = 10V, IOL = 68mA

1

+25oC

-

1.0

V

VOL15

VDD = 15V, IOL = 50mA

1

+25oC

-

0.5

V

Output Current (Source)

IOH5A

No Internal Pull-Up Device

Output Current (Source)

IOH5B

Output Current (Source)

IOH10

Output Current (Source)

IOH15

N Threshold Voltage

VNTH

VDD = 10V, ISS = -10

µA

1

+25oC

-2.8

-0.7

V

P Threshold Voltage

VPTH

VSS = 0V, IDD = 10

µA

1

+25oC

0.7

2.8

V

Functional (Note 3)

F

VDD = 2.8V, VIN = VDD or GND

7

+25oC

VOH >

VDD/2

VOL <

VDD/2

V

VDD = 20V, VIN = VDD or GND

7

+25oC

VDD = 18V, VIN = VDD or GND

8A

+125oC

VDD = 3V, VIN = VDD or GND

8B

-55oC

Input Voltage Low

(Note 2, 3)

VIL

VDD = 5V, VOH > 4.5V, VOL < 0.5V

1, 2, 3

+25oC, +125oC, -55oC

-

1.5

V

Input Voltage High

(Note 2, 3)

VIH

VDD = 5V, VOH > 4.5V, VOL < 0.5V

1, 2, 3

+25oC, +125oC, -55oC

3.5

-

V

Input Voltage Low

(Note 2, 3)

VIL

VDD = 15V, VOH > 13.5V,

VOL < 1.5V

1, 2, 3

+25oC, +125oC, -55oC-

4

V

Input Voltage High

(Note 2, 3)

VIH

VDD = 15V, VOH > 13.5V,

VOL < 1.5V

1, 2, 3

+25oC, +125oC, -55oC11

-

V

Tri-State Output

Leakage High

IOZ

VIN = VDD or GND

VOUT = VDD

VDD = 20V

1

+25oC-

2

µA

2

+125oC-

20

µA

VDD = 18V

3

-55oC-

2

µA

NOTES: 1. All voltages referenced to device GND, 100% testing being

implemented.

2. Go/No Go test with limits applied to inputs.

3. For accuracy, voltage is measured differentially to VDD. Limit

is 0.050V max.

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