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CA3280E Scheda tecnica(PDF) 10 Page - Intersil Corporation |
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CA3280E Scheda tecnica(HTML) 10 Page - Intersil Corporation |
10 / 10 page 10 Metallization Mask Layout FIGURE 23. SUPPLY CURRENT vs AMPLIFIER BIAS CURRENT FIGURE 24. INPUT BIAS CURRENT vs AMPLIFIER BIAS CURRENT Typical Performance Curves (Continued) 104 103 102 101 1 10-1 10-1 1 101 102 103 AMPLIFIER BIAS CURRENT ( µA) TA = 125 oC TA = -55 oC, 25oC VS = ±15V TA = -55 oC TA = 25 oC TA = 125 oC 104 103 102 101 1 10-1 1 101 102 103 AMPLIFIER BIAS CURRENT ( µA) VS = ±15V Dimensions in parentheses are in millimeters and derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch). The photographs and dimensions represent a chip when it is part of the wafer. When the wafer is cut into chips, the cleavage angles are 57o instead of 90o with respect to the face of the chip. Therefore, the isolated chip is actually 7 mils (0.17mm) larger in both dimensions. CA3280, CA3280A |
Codice articolo simile - CA3280E |
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Descrizione simile - CA3280E |
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