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BUZ11 Scheda tecnica(PDF) 1 Page - Intersil Corporation |
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BUZ11 Scheda tecnica(HTML) 1 Page - Intersil Corporation |
1 / 6 page 4-5 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 BUZ11 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Formerly developmental type TA9771. Features • 30A, 50V •rDS(ON) = 0.040Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-220AB Ordering Information PART NUMBER PACKAGE BRAND BUZ11 TO-220AB BUZ11 NOTE: When ordering, use the entire part number. G D S GATE DRAIN (FLANGE) SOURCE DRAIN June 1999 File Number 2253.2 Data Sheet |
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