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BF1210_2015 Scheda tecnica(PDF) 8 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1210_2015 Scheda tecnica(HTML) 8 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
8 / 21 page BF1210_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 25 October 2006 8 of 21 NXP Semiconductors BF1210 Dual N-channel dual gate MOSFET (1) RG1(A) =47kΩ. (2) RG1(A) =59kΩ. (3) RG1(A) =68kΩ. (4) RG1(A) =82kΩ. (5) RG1(A) = 100 kΩ. (6) RG1(A) = 120 kΩ. (7) RG1(A) = 150 kΩ. VG2-S =4V; Tj =25 °C. (1) VGG = 5.0 V. (2) VGG = 4.5 V. (3) VGG = 4.0 V. (4) VGG = 3.5 V. (5) VGG = 3.0 V. Tj =25 °C; RG1(A) =59kΩ (connected to VGG). Fig 8. Amplifier A: drain current as a function of VDS and VGG; typical values Fig 9. Amplifier A: drain current as a function of gate2 voltage; typical values 001aaf482 VGG = VDS (V) 05 4 23 1 10 15 5 20 25 ID (mA) 0 (1) (2) (3) (4) (5) (6) (7) 001aaf483 VG2-S (V) 05 4 23 1 10 20 30 ID (mA) 0 (1) (2) (3) (4) (5) |
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