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BF1208_2015 Scheda tecnica(PDF) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1208_2015 Scheda tecnica(HTML) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
4 / 22 page 9397 750 14254 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 16 March 2005 4 of 22 Philips Semiconductors BF1208 Dual N-channel dual gate MOSFET 6. Thermal characteristics 7. Static characteristics [1] RG1 connects gate1 (B) to VGG = 0 V (see Figure 3). [2] RG1 connects gate1 (B) to VGG = 5 V (see Figure 3). Table 6: Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-sp) thermal resistance from junction to solder point 225 K/W Table 7: Static characteristics Tj =25 °C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per MOSFET; unless otherwise specified V(BR)DSS drain-source breakdown voltage VG1-S =VG2-S =0V; ID =10 µA amplifier A 6 - - V amplifier B 6 - - V V(BR)G1-SS gate1-source breakdown voltage VG2-S =VDS =0V; IG1-S =10mA 6 - 10 V V(BR)G2-SS gate2-source breakdown voltage VG1-S =VDS =0V; IG2-S =10mA 6 - 10 V VF(S-G1) forward source-gate1 voltage VG2-S =VDS =0V; IS-G1 = 10 mA 0.5 - 1.5 V VF(S-G2) forward source-gate2 voltage VG1-S =VDS =0V; IS-G2 = 10 mA 0.5 - 1.5 V VG1-S(th) gate1-source threshold voltage VDS =5V; VG2-S =4V; ID = 100 µA 0.3 - 1.0 V VG2-S(th) gate2-source threshold voltage VDS =5V; VG1-S =5V; ID = 100 µA 0.4 - 1.0 V IDSX drain-source current VG2-S =4V; VDS(B) =5V; RG1 = 150 kΩ amplifier A; VDS(A) =5V [1] 14 - 24 mA amplifier B; VDS(B) =5V [2] 9 - 17 mA IG1-S gate1 cut-off current VG2-S =VDS(A) =0V amplifier A; VG1-S(A) =5V; ID(B) =0A - - 50 nA amplifier B; VG1-S(B) =5V; VDS(B) = 0 V - - 50 nA IG2-S gate2 cut-off current VG2-S =4V; VG1-S(B) =0V; VG1-S(A) =VDS(A) =VDS(B) =0V - - 20 nA |
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