BF1203_2015 datasheet(7/20 Pages) JMNIC

Il numero della parte	BF1203_2015

Spiegazioni elettronici	Dual N-channel dual gate MOS-FET

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Produttore elettronici	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

Homepage	http://www.jmnic.com

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7 / 20 page

2001 Apr 25

7

Philips Semiconductors

Product speciﬁcation

Dual N-channel dual gate MOS-FET

BF1203

handbook, halfpage

0

IG1 (µA)

10

50

16

12

4

0

8

20

30

40

MCD939

ID

(mA)

Fig.7

Drain current as a function of gate 1 current;

typical values.

Amplifier a

VDS = 5 V; VG2-S =4V.

Tj =25 °C.

handbook, halfpage

05

20

0

4

8

12

16

12

3

4

VGG (V)

ID

(mA)

MCD940

Fig.8

Drain current as a function of gate 1 supply

voltage (= VGG); typical values.

Amplifier a

VDS = 5 V; VG2-S = 4 V; Tj =25 °C.

RG1 =62kΩ (connected to VGG); see Fig.35.

handbook, halfpage

010

25

0

5

10

15

20

24

6

8

VGG = VDS (V)

ID

(mA)

MCD941

RG1 = 39 kΩ

47 k

Ω

56 k

Ω

62 k

Ω

68 k

Ω

82 k

Ω

100 k

Ω

Fig.9

Drain current as a function of gate 1 (= VGG)

and drain supply voltage; typical values.

Amplifier a

VG2-S = 4 V; Tj =25 °C.

RG1 connected to VGG; see Fig.35.

handbook, halfpage

024

6

VG2-S (V)

ID

(mA)

20

0

16

12

8

4

MCD942

VGG = 5 V

4.5 V

4 V

3.5 V

3 V

Amplifier a

VDS = 5 V; Tj =25 °C.

RG1 =62kΩ (connected to VGG); see Fig.35.

Fig.10 Drain current as a function of gate 2

voltage; typical values.

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BF1203_2015 Scheda tecnica(PDF) 7 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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