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BF909WR_2015 Scheda tecnica(PDF) 6 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF909WR_2015 Scheda tecnica(HTML) 6 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
6 / 12 page 1997 Sep 05 6 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR Fig.7 Forward transfer admittance as a function of drain current; typical values. VDS =5V. Tj =25 °C. handbook, halfpage 0 60 40 20 0 10 20 30 MLB940 y fs (mS) I (mA) D 3.5 V 3 V 2.5 V 2 V V = 4 V G2 S Fig.8 Drain current as a function of gate 1 current; typical values. VDS =5V. VG2-S =4V. Tj =25 °C. handbook, halfpage 020 40 60 25 0 20 MLB941 15 10 5 I ( µA) G1 I D (mA) Fig.9 Drain current as a function of gate 1 supply voltage (= VGG); typical values; see Fig.17. VDS = 5 V; VG2-S =4V. RG1 = 120 kΩ (connected to VGG); Tj =25 °C. handbook, halfpage 02 46 16 12 4 0 8 MLB942 V (V) GG I D (mA) Fig.10 Drain current as a function of gate 1 (= VGG) and drain supply voltage; typical values; see Fig.17. VG2-S =4V. RG1 connected to VGG; Tj =25 °C. handbook, halfpage 0 30 20 10 0 24 8 MLB943 6 V = V (V) GG DS I D (mA) R = 47 k Ω G1 68 k Ω 82 k Ω 100 k Ω 120 k Ω 150 k Ω 180 k Ω 220 k Ω |
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