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BF861_2015 Scheda tecnica(PDF) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF861_2015 Scheda tecnica(HTML) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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3 / 12 page  1997 Sep 04 3 Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) − 25 V VGSO gate-source voltage open drain − 25 V VDGO drain-gate voltage (DC) open source − 25 V IG forward gate current (DC) − 10 mA Ptot total power dissipation up to Tamb =25 °C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C Fig.2 Power derating curve. MRC166 0 100 200 300 0 50 100 150 P tot (mW) Tamb ( C) o |
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