BF245A_2015 datasheet(3/11 Pages) JMNIC

Il numero della parte	BF245A_2015

Spiegazioni elettronici	N-channel silicon field-effect transistors

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Produttore elettronici	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

Homepage	http://www.jmnic.com

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3 / 11 page

1996 Jul 30

3

Philips Semiconductors

Product speciﬁcation

N-channel silicon ﬁeld-effect transistors

BF245A; BF245B; BF245C

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum

10 mm

× 10 mm.

THERMAL CHARACTERISTICS

STATIC CHARACTERISTICS

Tj =25 °C; unless otherwise specified.

Note

1. Measured under pulse conditions: tp = 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage

−±30

V

VGDO

gate-drain voltage

open source

−−30

V

VGSO

gate-source voltage

open drain

−−30

V

ID

drain current

−

25

mA

IG

gate current

−

10

mA

Ptot

total power dissipation

up to Tamb =75 °C;

−

300

mW

up to Tamb =90 °C; note 1

−

300

mW

Tstg

storage temperature

−65

+150

°C

Tj

operating junction temperature

−

150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

in free air

250

K/W

thermal resistance from junction to ambient

200

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V(BR)GSS

gate-source breakdown voltage

IG = −1 µA; VDS =0

−30

−

V

VGSoff

gate-source cut-off voltage

ID = 10 nA; VDS =15V

−0.25

−8.0

V

VGS

gate-source voltage

ID = 200 µA; VDS =15V

BF245A

−0.4

−2.2

V

BF245B

−1.6

−3.8

V

BF245C

−3.2

−7.5

V

IDSS

drain current

VDS =15V; VGS = 0; note 1

BF245A

2

6.5

mA

BF245B

6

15

mA

BF245C

12

25

mA

IGSS

gate cut-off current

VGS = −20 V; VDS =0

−−5nA

VGS = −20 V; VDS = 0; Tj = 125 °C

−−0.5

µA

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