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IRF6608 Scheda tecnica(PDF) 4 Page - International Rectifier

Il numero della parte IRF6608
Spiegazioni elettronici  Application Specific MOSFETs
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRF6608 Scheda tecnica(HTML) 4 Page - International Rectifier

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
TJ = 25°C
TJ = 150°C
VGS = 0V
0
1
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
-75
-50
-25
0
25
50
75
100
125
150
TJ , Temperature ( °C )
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
ID = 250µA
25
50
75
100
125
150
TJ , Junction Temperature (°C)
0
10
20
30
40
50
60
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
100
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci
i
/Ri
Ci=
τi/Ri
τ
τ
C
τ
4
τ
4
R
4
R
4
Ri (°C/W)
τi (sec)
2.023
0.000678
19.48
0.240237
21.78
2.0167
14.71
58


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