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SI6975DQ Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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SI6975DQ Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 10 page www.vishay.com 2 Document Number: 71319 S-81221-Rev. B, 02-Jun-08 Vishay Siliconix Si6975DQ Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 5 mA - 0.45 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 9.6 V, VGS = 0 V - 1 µA VDS = - 9.6 V, VGS = 0 V, TJ = 70 °C - 25 On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 4.5 V - 20 A Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 5.1 A 0.022 0.027 Ω VGS = - 2.5 V, ID = - 4.5 A 0.028 0.035 VGS = - 1.8 V, ID = - 3.9 A 0.037 0.046 Forward Transconductancea gfs VDS = - 5 V, ID = - 5.1 A 20 S Diode Forward Voltagea VSD IS = - 1.0 A, VGS = 0 V - 0.65 - 1.1 V Dynamicb Total Gate Charge Qg VDS = - 6 V, VGS = - 4.5 V, ID = - 5.1 A 23 30 nC Gate-Source Charge Qgs 3.0 Gate-Drain Charge Qgd 4.3 Turn-On Delay Time td(on) VDD = - 6 V, RL = 6 Ω ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω 25 40 ns Rise Time tr 32 50 Turn-Off Delay Time td(off) 96 140 Fall Time tf 62 95 Source-Drain Reverse Recovery Time trr IF = - 1.0 A, dI/dt = 100 A/µs 60 100 Output Characteristics 0 6 12 18 24 30 0 2468 10 VGS = 5 thru 2.5 V VDS - Drain-to-Source Voltage (V) 2 V 0.5, 1 V 1.5 V Transfer Characteristics 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 125 °C 25 °C VGS - Gate-to-Source Voltage (V) |
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