SI6975DQ datasheet(2/10 Pages) VISHAY

Il numero della parte	SI6975DQ

Spiegazioni elettronici	Dual P-Channel 12-V (D-S) MOSFET

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Document Number: 71319

S-81221-Rev. B, 02-Jun-08

Vishay Siliconix

Si6975DQ

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = - 5 mA

- 0.45

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 8 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 9.6 V, VGS = 0 V

- 1

µA

VDS = - 9.6 V, VGS = 0 V, TJ = 70 °C

- 25

On-State Drain Currenta

ID(on)

VDS = - 5 V, VGS = - 4.5 V

- 20

A

Drain-Source On-State Resistancea

RDS(on)

VGS = - 4.5 V, ID = - 5.1 A

0.022

0.027

Ω

VGS = - 2.5 V, ID = - 4.5 A

0.028

0.035

VGS = - 1.8 V, ID = - 3.9 A

0.037

0.046

Forward Transconductancea

gfs

VDS = - 5 V, ID = - 5.1 A

20

S

Diode Forward Voltagea

VSD

IS = - 1.0 A, VGS = 0 V

- 0.65

- 1.1

V

Dynamicb

Total Gate Charge

Qg

VDS = - 6 V, VGS = - 4.5 V, ID = - 5.1 A

23

30

nC

Gate-Source Charge

Qgs

3.0

Gate-Drain Charge

Qgd

4.3

Turn-On Delay Time

td(on)

VDD = - 6 V, RL = 6 Ω

ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω

25

40

ns

Rise Time

tr

32

50

Turn-Off Delay Time

td(off)

96

140

Fall Time

tf

62

95

Source-Drain Reverse Recovery Time

trr

IF = - 1.0 A, dI/dt = 100 A/µs

60

100

Output Characteristics

0

6

12

18

24

30

0

2468

10

VGS = 5 thru 2.5 V

VDS - Drain-to-Source Voltage (V)

2 V

0.5, 1 V

1.5 V

Transfer Characteristics

0

6

12

18

24

30

0.0

0.5

1.0

1.5

2.0

2.5

TC = - 55 °C

125 °C

25 °C

VGS - Gate-to-Source Voltage (V)

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