Motore di ricerca datesheet componenti elettronici |
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BAP50-04W_2015 Scheda tecnica(PDF) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BAP50-04W_2015 Scheda tecnica(HTML) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
3 / 8 page 2001 Jan 29 3 Philips Semiconductors Product specification General purpose PIN diode BAP50-04W ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per diode VF forward voltage IF =50mA − 0.95 1.1 V VR reverse voltage IR =10 µA50 −− V IR reverse current VR =50V −− 100 nA Cd diode capacitance VR = 0; f = 1 MHz − 0.45 − pF VR = 1 V; f = 1 MHz − 0.35 0.6 pF VR = 5 V; f = 1 MHz − 0.30 0.5 pF rD diode forward resistance IF = 0.5 mA; f = 100 MHz; note 1 − 25 40 Ω IF = 1 mA; f = 100 MHz; note 1 − 14 25 Ω IF = 10 mA; f = 100 MHz; note 1 − 35 Ω τ L charge carrier life time when switched from IF = 10 mA to IR = 6 mA; RL = 100 Ω; measured at IR =3mA − 1.05 −µs LS series inductance IF = 10 mA; f = 100 MHz − 1.60 − nH SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering point 250 K/W |
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