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2SC4056_2014 Scheda tecnica(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SC4056_2014 Scheda tecnica(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page Product Specification www.jmnic.com JMnic Silicon NPN Power Transistors 2SC4056 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 450 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 1.0 V VBEsat Emitter-base saturation voltage IC=4A; IB=0.8A 1.5 V ICBO ICEO Collector cut-off current At rated volatge 0.1 mA IEBO Emitter cut-off current At rated volatge 0.1 mA hFE-1 DC current gain IC=4A ; VCE=5V 10 hFE-2 DC current gain IC=1mA ; VCE=5V 5 fT Transition frequency IC=0.8A ; VCE=10V 20 MHz ton Turn-on time 0.5 μs ts Storage time 2.0 μs tf Fall time IC=4A;IB1=0.8A IB2=1.6A ,RL=37.5Ω VBB2=4V 0.2 μs |
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