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2SC3420_2014 Scheda tecnica(PDF) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SC3420_2014 Scheda tecnica(HTML) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
1 / 4 page JMnic Product Specification Silicon NPN Power Transistors 2SC3420 DESCRIPTION ・ ・With TO-126 package ・High DC current gain ・Low saturation voltage ・High collector power dissipation APPLICATIONS ・Storobo flash applications ・Medium power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 50 V VCEO Collector- emitter voltage Open base 20 V VEBO Emitter-base voltage Open collector 8 V IC Collector current 5 A ICM Collector current-peak 8 A IB Base current 1 A Ta=25℃ 1.5 PC Collector power dissipation TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~+150 ℃ |
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