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SI4505DY-T1 Scheda tecnica(PDF) 8 Page - Vishay Siliconix

Il numero della parte SI4505DY-T1
Spiegazioni elettronici  N- and P-Channel MOSFET
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Produttore elettronici  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI4505DY-T1 Scheda tecnica(HTML) 8 Page - Vishay Siliconix

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Document Number: 71826
S09-0868-Rev. C, 18-May-09
Vishay Siliconix
Si4505DY
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71826.
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10-3
10-2
1
10
600
10-1
10-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
100
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
Normalized Thermal Transient Impedance, Junction-to-Foot
10-3
10-2
110
10-1
10-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)


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