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2SA1185 Scheda tecnica(PDF) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SA1185 Scheda tecnica(HTML) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
1 / 3 page JMnic Product Specification Silicon PNP Power Transistors 2SA1185 DESCRIPTION ・With TO-3PN package ・High current capability ・Low collector saturation voltage APPLICATIONS ・High power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -50 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -7 A ICM Collector current-peak -15 A IBM Base current-peak -5 A PC Collector power dissipation TC=25℃ 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3PN) and symbol |
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