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STB40N60M2 Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte STB40N60M2
Spiegazioni elettronici  N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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DocID024932 Rev 3
3/21
STB40N60M2, STP40N60M2, STW40N60M2
Electrical ratings
21
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
GS
Gate-source voltage
± 25
V
I
D
Drain current (continuous) at T
C
= 25 °C
34
A
I
D
Drain current (continuous) at T
C
= 100 °C
22
A
I
DM
(1)
1.
Pulse width limited by safe operating area.
Drain current (pulsed)
136
A
P
TOT
Total dissipation at T
C
= 25 °C
250
W
dv/dt
(2)
2.
I
SD
≤ 34 A, di/dt ≤ 400 A/μs; V
DS peak
< V
(BR)DSS
, V
DD
=400 V.
Peak diode recovery voltage slope
15
V/ns
dv/dt
(3)
3.
V
DS
480 V
MOSFET dv/dt ruggedness
50
V/ns
T
stg
Storage temperature
- 55 to 150
°C
T
j
Max. operating junction temperature
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
D2PAK
TO-220
TO-247
R
thj-case
Thermal resistance junction-case max
0.50
°C/W
R
thj-pcb
Thermal resistance junction-pcb max
(1)
1.
When mounted on 1 inch² FR-4, 2 Oz copper board
30
°C/W
R
thj-amb
Thermal resistance junction-ambient max
62.5
50
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
I
AR
Avalanche current, repetitive or not
repetitive (pulse width limited by T
jmax
)
6A
E
AS
Single pulse avalanche energy (starting
T
j
=25°C, I
D
= I
AR
; V
DD
=50 V)
500
mJ


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