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1N4007GP Scheda tecnica(PDF) 1 Page - Diotec Semiconductor |
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1N4007GP Scheda tecnica(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page 1N4001GP ... 1N4007GP 1N4001GP ... 1N4007GP Glass Passivated Silicon Rectifier Diodes Glaspassivierte Silizium-Gleichrichterdioden Version 2013-02-20 Dimensions - Maße [mm] Nominal current Nennstrom 1 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50...1000 V Plastic case Kunststoffgehäuse ~DO-41 ~DO-204AC Weight approx. Gewicht ca. 0.4 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings Grenzwerte Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 1N4001GP 50 50 1N4002GP 100 100 1N4003GP 200 200 1N4004GP 400 400 1N4005GP 600 600 1N4006GP 800 800 1N4007GP 1000 1000 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TA = 75°C TA = 100°C IFAV 1 A 1) 0.8 A 1) Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 5.4 A 1) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 27/30 A Rating for fusing – Grenzlastintegral, t < 10 ms TA = 25°C i2t 3.6 A2s Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+175°C -50...+175°C 1 Valid, if leads are kept at ambient temperature at a distance of 10 mm from case Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden © Diotec Semiconductor AG http://www.diotec.com/ 1 Ø 0.77±0.07 Ø 2.6 0.1 ± |
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