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NE27200 Scheda tecnica(PDF) 2 Page - NEC |
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NE27200 Scheda tecnica(HTML) 2 Page - NEC |
2 / 8 page NE32500, NE27200 2 CHIP DIMENSIONS (Unit: µm) 58 36.5 66 25 5.5 13 25 49.5 43 66 13 350 Drain Source Source Gate Thickness = 140 m µ : BONDING AREA TYPICAL CHARACTERISTICS (TA = 25 ˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 00 50 1.5 3.0 100 150 200 250 TA – Ambient Temperature – ˚C VDS – Drain to Source Voltage – V 250 100 80 60 40 20 200 150 100 50 VGS = 0 V –0.2 V –0.4 V –0.6 V –0.8 V |
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Descrizione simile - NE27200 |
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