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2SK3142 Scheda tecnica(PDF) 6 Page - Hitachi Semiconductor |
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2SK3142 Scheda tecnica(HTML) 6 Page - Hitachi Semiconductor |
6 / 10 page 2SK3142 6 0.1 0.3 1 3 10 30 100 010 20 30 40 50 1000 10000 3000 50 40 30 20 10 0 20 16 12 8 4 80 160 240 320 400 0 1000 100 200 20 10 0.1 0.2 2 10 100 1000 500 100 200 20 50 10 di / dt = 50 A / µs V = 0, Ta = 25°C GS 300 20 1 Reverse Drain Current I (A) DR Body–Drain Diode Reverse Recovery Time Drain to Source Voltage V (V) DS Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Dynamic Input Characteristics Drain Current I (A) D Switching Characteristics 100 V = 0 f = 1 MHz GS Ciss Coss Crss I = 60 A D VGS VDS V = 20 V 10 V 5 V DS 0.5 5 V = 20 V 10 V 5 V DS 500 50 50 V = 10 V, V = 10 V PW = 5 µs, duty < 1% GS DD r t d(on) t d(off) t t f 30000 |
Codice articolo simile - 2SK3142 |
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