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2SK3070S Scheda tecnica(PDF) 4 Page - Hitachi Semiconductor |
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2SK3070S Scheda tecnica(HTML) 4 Page - Hitachi Semiconductor |
4 / 10 page Datasheet Title 4 Main Characteristics 200 150 100 0 50 100 150 200 0.1 0.3 1 3 10 30 100 100 80 60 40 20 0 2 468 10 1000 300 100 30 10 1 0.3 0.1 3 Ta = 25 °C 10 µs 100 µs 1 ms DC Operation (Tc = 25 °C) PW = 10 ms (1 shot) 3.5 V 3 V 50 V = 10 V GS 5 V 4 V 2.5 V 100 80 60 40 20 0 12 34 5 Tc = –25 °C 25 °C 75 °C V = 10 V Pulse Test DS Pulse Test Case Temperature Tc ( °C) Power vs. Temperature Derating Drain to Source Voltage V (V) DS Maximum Safe Operation Area Drain to Source Voltage V (V) DS Typical Output Characteristics Gate to Source Voltage V (V) GS Typical Transfer Characteristics Operation in this area is limited by R DS(on) |
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