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2SK2957S Scheda tecnica(PDF) 4 Page - Hitachi Semiconductor |
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2SK2957S Scheda tecnica(HTML) 4 Page - Hitachi Semiconductor |
4 / 9 page 2SK2957(L),2SK2957(S) 4 0.5 0.4 0.3 0.2 0.1 0 48 12 16 20 1 10 100 250 100 20 50 10 5 20 16 12 8 4 –40 0 40 80 120 160 0 0.1 0.2 1 2 10 10 5 1 2 0.5 20 5 Gate to Source Voltage V (V) GS Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain Current I (A) D Static Drain to Source on State Resistance vs. Drain Current Case Temperature Tc (°C) Static Drain to Source on State Resistance vs. Temperature Drain Current I (A) D Forward Transfer Admittance vs. Drain Current V = 4 V GS 10 V 5 ,10, 20 A 20 20 50 50 Pulse Test Pulse Test I = 20 A D 10 A 5 A 500 500 200 V = 4 V GS 10 V Pulse Test I = 5, 10, 20 A D 0.5 5 25 °C Tc = –25 °C 75 °C V = 10 V Pulse Test DS |
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