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2SK2957S Scheda tecnica(PDF) 4 Page - Hitachi Semiconductor

Il numero della parte 2SK2957S
Spiegazioni elettronici  Silicon N Channel MOS FET High Speed Power Switching
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Produttore elettronici  HITACHI [Hitachi Semiconductor]
Homepage  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SK2957S Scheda tecnica(HTML) 4 Page - Hitachi Semiconductor

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2SK2957(L),2SK2957(S)
4
0.5
0.4
0.3
0.2
0.1
0
48
12
16
20
1
10
100
250
100
20
50
10
5
20
16
12
8
4
–40
0
40
80
120
160
0
0.1 0.2
1
2
10
10
5
1
2
0.5
20
5
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current
I
(A)
D
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature
Tc
(°C)
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
(A)
D
Forward Transfer Admittance vs.
Drain Current
V
= 4 V
GS
10 V
5 ,10, 20 A
20
20
50
50
Pulse Test
Pulse Test
I
= 20 A
D
10 A
5 A
500
500
200
V
= 4 V
GS
10 V
Pulse Test
I
= 5, 10, 20 A
D
0.5
5
25 °C
Tc = –25 °C
75 °C
V
= 10 V
Pulse Test
DS


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