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2SK2957L Scheda tecnica(PDF) 2 Page - Hitachi Semiconductor |
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2SK2957L Scheda tecnica(HTML) 2 Page - Hitachi Semiconductor |
2 / 9 page 2SK2957(L),2SK2957(S) 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage V DSS 30 V Gate to source voltage V GSS ±20 V Drain current I D 50 A Drain peak current I D(pulse) Note1 200 A Body-drain diode reverse drain current I DR 50 A Channel dissipation Pch Note2 75 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS 30 ——V I D = 10mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±20 ——V I G = ±100µA, VDS = 0 Zero gate voltege drain current I DSS ——10 µAV DS = 30 V, VGS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±16V, VDS = 0 Gate to source cutoff voltage V GS(off) 1.0 — 2.0 V I D = 1mA, VDS = 10V Static drain to source on state resistance R DS(on) — 7.0 10 m Ω I D = 25A, VGS = 10V Note3 Static drain to source on state resistance R DS(on) — 1218m Ω I D = 25A, VGS = 4V Note3 Forward transfer admittance |y fs| 2545— S I D = 25A, VDS = 10V Note3 Input capacitance Ciss — 2000 — pF V DS = 10V Output capacitance Coss — 1500 — pF V GS = 0 Reverse transfer capacitance Crss — 350 — pF f = 1MHz Turn-on delay time t d(on) — 20 — ns V GS = 10V, ID = 25A Rise time t r — 330 — ns R L = 0.4Ω Turn-off delay time t d(off) — 190 — ns Fall time t f — 190 — ns Body–drain diode forward voltage V DF — 0.95 — V I F = 50A, VGS = 0 Body–drain diode reverse recovery time t rr — 60 — ns I F = 50A, VGS = 0 diF/ dt =50A/ µs Note: 3. Pulse test |
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