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2SK2930 Scheda tecnica(PDF) 3 Page - Hitachi Semiconductor |
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2SK2930 Scheda tecnica(HTML) 3 Page - Hitachi Semiconductor |
3 / 10 page 2SK2930 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS 60 ——V I D = 10mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±20 ——V I G = ±100µA, VDS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±16V, VDS = 0 Zero gate voltege drain current I DSS ——10 µAV DS = 60 V, VGS = 0 Gate to source cutoff voltage V GS(off) 1.5 — 2.5 V I D = 1mA, VDS = 10V Static drain to source on state R DS(on) — 0.020 0.026 Ω I D = 15A, VGS = 10V Note4 resistance R DS(on) — 0.032 0.050 Ω I D = 15A, VGS = 4V Note4 Forward transfer admittance |y fs| 1423— S I D = 15A, VDS = 10V Note4 Input capacitance Ciss — 1100 — pF V DS = 10V Output capacitance Coss — 540 — pF V GS = 0 Reverse transfer capacitance Crss — 200 — pF f = 1MHz Turn-on delay time t d(on) — 15 — ns I D = 15A, VGS = 10V Rise time t r — 180 — ns R L = 2Ω Turn-off delay time t d(off) — 175 — ns Fall time t f — 195 — ns Body–drain diode forward voltage V DF — 0.95 — V I F = 35A, VGS = 0 Body–drain diode reverse recovery time t rr — 40 — ns I F = 35A, VGS = 0 diF/ dt =50A/ µs Note: 4. Pulse test |
Codice articolo simile - 2SK2930 |
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