2SK2926S datasheet(6/10 Pages) HITACHI

Il numero della parte	2SK2926S

Spiegazioni elettronici	Silicon N Channel MOS FET High Speed Power Switching

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Produttore elettronici	HITACHI [Hitachi Semiconductor]

Homepage	http://www.renesas.com/eng

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6 / 10 page

2SK2926(L), 2SK2926(S)

6

0.1

0.5

1

2

10

0.2

5

010

20

30

40

50

1000

200

500

100

10

20

50

100

80

60

40

20

0

20

16

12

8

4

8

16

24

32

400

0

1000

300

100

30

10

0.1

0.2

1

5

10

V

= 10 V

25 V

50 V

DD

V

= 50 V

25 V

10 V

DD

500

200

100

20

50

10

5

2000

V

= 0

f = 1 MHz

GS

Ciss

Coss

Crss

I

= 15A

D

VGS

VDS

3

1

0.5

2

Reverse Drain Current

I

(A)

DR

Body to Drain Diode Reverse

Recovery Time

Drain to Source Voltage V

(V)

DS

Typical Capacitance vs.

Drain to Source Voltage

Gate Charge

Qg (nc)

Dynamic Input Characteristics

Drain Current

I

(A)

D

Switching Characteristics

20

r

t

V

= 10 V, V

= 30 V

PW = 5

µs, duty < 1 %

GS

DD

t f

d(on)

t

d(off)

t

di / dt = 50 A /

µs

V

= 0, Ta = 25

°C

GS

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2SK2926S Scheda tecnica(PDF) 6 Page - Hitachi Semiconductor

2SK2926S Scheda tecnica(HTML) 6 Page - Hitachi Semiconductor

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