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2SK2922 Scheda tecnica(PDF) 3 Page - Hitachi Semiconductor |
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2SK2922 Scheda tecnica(HTML) 3 Page - Hitachi Semiconductor |
3 / 7 page 2SK2922 3 Main Characteristics 0 50 100 150 200 4 3 2 1 1.0 0.8 0.6 0.4 0.2 0 0.5 1.0 1.5 2.0 2.5 5 4 3 2 1 0 1 23 4 5 6 5 V 6 V Tc = –25°C 25°C 75°C 0.001 1 0.3 0.03 0.1 0.003 0.01 0.3 0.1 0.3 1 0.01 Case Temperature Tc (°C) Maximum Channel Power Dissipation Curve Drain to Source Voltage V (V) DS Typical Output Characteristics Pulse Test V = 5 V Pulse Test DS Gate to Source Voltage V (V) GS Typical Transfer Characteristics Drain Current I (A) D Forward Transfer Admittance vs. Drain Current 5.5 V V = 1 V GS 4.5 V 4 V 3.5 V 3 V 2.5 V 2 V 1.5 V V = 5 V Pulse Test DS Tc = –25°C 25°C 75°C 3 10 |
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