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IRL1104L Scheda tecnica(PDF) 1 Page - International Rectifier

Il numero della parte IRL1104L
Spiegazioni elettronici  Logic-Level Gate Drive
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRL1104L Scheda tecnica(HTML) 1 Page - International Rectifier

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IRL1104S/L
HEXFET® Power MOSFET
PD -91840
l Advanced Process Technology
l Surface Mount (IRL1104S)
l Low-profile through-hole (IRL1104L)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.9
RθJA
Junction-to-Ambient(PCB Mounted,steady-state)**
–––
62
Thermal Resistance
°C/W
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V…
104
†
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V…
74
†
A
IDM
Pulsed Drain Current
…
416
PD @TA = 25°C
Power Dissipation
2.4
W
PD @TC = 25°C
Power Dissipation
167
W
Linear Derating Factor
1.1
W/°C
VGS
Gate-to-Source Voltage
±16
V
EAS
Single Pulse Avalanche Energy
‚…
340
mJ
IAR
Avalanche Current

62
A
EAR
Repetitive Avalanche Energy

17
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ…
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highestpowercapabilityandthelowestpossibleon-resistance
in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0W
in a typical surface mount application.
The through-hole version (IRL1104L) is available for low-
profile applications.
Description
VDSS = 40V
RDS(on) = 0.008Ω
ID = 104A
†
2
D
P ak
TO-26 2
S
D
G
10/28/98
l Logic-Level Gate Drive
www.irf.com
1
PRELIMINARY


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