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IRL1104L Scheda tecnica(PDF) 2 Page - International Rectifier

Il numero della parte IRL1104L
Spiegazioni elettronici  Logic-Level Gate Drive
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Produttore elettronici  IRF [International Rectifier]
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IRL1104L Scheda tecnica(HTML) 2 Page - International Rectifier

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IRL1104S/L
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Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.04
–––
V/°C
Reference to 25°C, ID =1mA
…
–––
––– 0.008
VGS = 10V, ID = 62A
„
–––
––– 0.012
W
VGS = 4.5V, ID = 52A
„
VGS(th)
Gate Threshold Voltage
1.0
–––
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
53
–––
–––
S
VDS = 25V, ID = 62A
…
–––
–––
25
µA
VDS =40V, VGS = 0V
–––
–––
250
VDS = 32V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 16V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -16V
Qg
Total Gate Charge
–––
–––
68
ID =62A
Qgs
Gate-to-Source Charge
–––
–––
24
nC
VDS = 32V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
34
VGS = 4.5V, See Fig. 6 and 13
„…
td(on)
Turn-On Delay Time
–––
18
–––
VDD = 20V
tr
Rise Time
–––
257
–––
ID =54A
td(off)
Turn-Off Delay Time
–––
32
–––
RG = 3.6Ω , VGS = 4.5V
tf
Fall Time
–––
64
–––
RD = 0.4Ω, See Fig. 10
„…
Between lead,
–––
–––
and center of die contact
Ciss
Input Capacitance
–––
3445 –––
VGS = 0V
Coss
Output Capacitance
–––
1065 –––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
270
–––
ƒ = 1.0MHz, See Fig. 5
…
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
Static Drain-to-Source On-Resistance
IGSS
IDSS
Drain-to-Source Leakage Current
LS
Internal Source Inductance
7.5
nH
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ I
SD ≤ 62A, di/dt ≤ 217A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
‚ V
DD = 15V, starting TJ = 25°C, L = 0.18mH
RG = 25Ω, IAS = 62A. (See Figure 12)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
… Uses IRL1104 data and test conditions.
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS =62A, VGS = 0V
„
trr
Reverse Recovery Time
–––
84
126
ns
TJ = 25°C, IF =62A
Qrr
Reverse Recovery Charge
–––
223
335
nC
di/dt = 100A/µs
„…
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
A
104
†
416
S
D
G
† Calculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4


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